A joint research team comprising Professor Kim Young-hoon from Hanyang University's Department of Energy Engineering, Professor Yeom Bong-jun from the Department of Chemical Engineering, and Dr. Baek Seung-heon from the Semiconductor Technology Research Division at the Korea Institute of Science and Technology (KIST) announced a groundbreaking development on November 11. They successfully created the world’s first lead-free chiral metallic halide spin-selective layer that can be applied to next-generation Magnetic Random Access Memory (MRAM). This advancement is essential for in-memory computing, which processes artificial intelligence (AI) operations internally due to MRAM's strengths in speed, low power consumption, and near-permanent durability.

The research addresses inherent challenges in MRAM related to the complexity of ferromagnetic layer structures as devices miniaturize, which leads to increased power consumption and thermal stability issues. They developed a lead-free chiral halide material that autonomously generates spin-aligned currents without additional magnetic layers. The eco-friendly Bi-based material exhibits a chiral structure where charge carriers' spins align in a specific direction, taking advantage of the chiral-induced spin selectivity (CISS) effect, simplifying device architecture without relying on external magnets.

Furthermore, the team discovered that by gradually adjusting the halogen composition from bromine (Br) to iodine (I), there is an inverse relationship between microstrain and spin selectivity, revealing insights critical for successful implementation of high spin polarization in MRAM devices. This innovative approach offers a solution to previously faced challenges like high-density timing issues and thermal instability during miniaturization. As a lead-free, eco-friendly alternative, the development could simplify complex magnetic structures, paving the way for advanced low-power, high-speed spintronic devices and in-memory AI technologies.