Samsung Electronics has commenced mass production shipment of HBM4, the world's first 6th generation high-bandwidth memory, leading the competition in the AI memory market against SK Hynix.
Samsung Electronics recently announced the mass production and shipment of HBM4, the world’s first high-bandwidth memory of its kind, reinforcing its position in the AI memory market as it competes with SK Hynix. This launch is particularly notable as it emphasizes Samsung’s capabilities in producing cutting-edge memory tech, showcasing a commitment to innovation in AI and semiconductor performance.
The HBM4 boasts advanced features such as a unique stacking design of conventional DRAM into 12 layers, allowing for enhanced data transmission with 2048 channels optimized for large-scale data handling. By incorporating a 10-nanometer fabrication process, Samsung claims a technological edge over SK Hynix, which utilizes a slightly older 1b process. Despite previous market criticisms toward Samsung regarding yield challenges, the company has firmly addressed these concerns by presenting strong performance metrics.
Beyond performance benchmarks, Samsung highlights that their HBM4 can achieve a data transfer rate exceeding 11.7 gigabits per second, surpassing JEDEC (Joint Electron Device Engineering Council) standards and potentially reaching up to 13 gigabits per second. The company projects that the sales of HBM products will more than triple compared to last year, with an ambitious plan to release samples of the next generation, HBM4E, later this year. This development indicates growing competition in the semiconductor industry, particularly in the context of AI technologies, where rapid advancements are critical to maintaining market leadership.
