A research team at Seoul City University has successfully developed a world-first plasma-based process for achieving extremely low-resistance ohmic contacts in two-dimensional semiconductors, published in a renowned nano-science journal.
The research conducted by Professor Kim Tae-wan's team at Seoul City University, in collaboration with Professor Lee Hyo-chang's team from Korea Aerospace University, presents a groundbreaking advancement in semiconductor technology through their paper titled "Plasma Knowledge-Based Polymorphic Engineering for Two-Dimensional Semiconductor Contacts." Their innovative plasma-based approach aims to address the longstanding high-contact resistance issue that has hindered the commercialization of two-dimensional transition metal dichalcogenide (2D TMD) semiconductors. Unlike traditional plasma processes that rely on empirical adjustments, this new framework introduces precise measurements of internal physical parameters, allowing for the fine control of ion energy flux.
